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LumiGNtech co., Ltd.

R&D

 
R&D Patents

Patents

No.

Title

Country

Application Serial No.

Publication No. or Patent No.

Date of Application of Date of Patent

F-5

Method of manufacturing substrate

Japan

2012-232668 

JP 5631952 

2014.10.17 

F-4

Method of manufacturing substrate

USA

13/656734

 US 8853064 B2

2014.10.21

F-3

Semiconductor substrate and method for manufacturing the same

USA

12/935,978

US 8729670 B2 

2014.05.20

F-2

Semiconductor substrate and method for manufacturing the same

USA

12/917,970

US2011-0101307A1

2011.05.05

F-1

Semiconductor substrate and method for manufacturing the same

PCT

PCT/KR2009

/001932

WO2009/128646

2009.10.22

13

Method of manufacturing a substrate

Korea

10-2014-0037524

 

2014.03.31

12

Method of manufacturing a substrate

Korea

10-2014-0019545

 

2014.02.20

11

Method of manufacturing a substrate

Korea

10-2013-0111508

 

2013.09.17

10

Method of manufacturing a substrate

Korea

10-2012-0046448

10-1420265

2014.07.10

9

Method of manufacturing a substrate

Korea

10-2012-0026686

10-1248476

2013.03.22

8

Method of manufacturing a substrate

Korea

10-2011-0048837

10-1173985

2012.08.08

7

Method of manufacturing a substrate

Korea

10-2011-0002293

10-1178504

2012.08.24

6

Substrate for semiconductor device and method for manufacturing the same

Korea

10-2009-0105515

10-1178505

2012.08.24

5

Reaction metal supply Units of Hydride Vapor Phase Epitaxy Reactor

Korea

10-2009-0092251

10-1144201

2012.08.05

4

A bellows angle valve with a damping cylinder

Korea

10-2009-0074601

10-1113062

2012.01.31

3

Substrate for semiconductor device and method for manufacturing the same

Korea

10-2008-0104550

10-1018760

2011.02.23

2

Substrate for semiconductor device and method for manufacturing the same

Korea

10-2008-0035114 

10-0990971

2010.10.25

1

Substrate for semiconductor device and method for manufacturing the same and semiconductor device

Korea

10-2008-0003160

10-0945438

2010.02.25