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LumiGNtech co., Ltd.

R&D

 
R&D Publications

Publications

Paper

Journal

Date 

Title 

JKPS (Journal of the Korean Physical Society)

2015. 01 

Effects of Group V/III ratio and GaN inter-layer on the crystal quality of InN grown by Hydride vapor phase epitaxy method. 

JKCGCT (Journal of the Korean Crystal Growth and Crystal Technology)

2014. 04 

Effects of Group V/III ratio on a -plance GaN epitaxial Layer on r-plane sapphire grown by HVPE 

PSS C (Physica status Solidi C)

2014. 03 

The control of mechanical bow for GaN substrate grown by HVPE with rel atively longer radiius of lattice curvature 

Journal of Crystal Growth

2012. 09 

Epitaxy of GaN on Si(111)substrate with AlcGa 1-xN buffer layer by hydride vapor phase epitaxy method 

Journal of Crystal Growth

2012. 03

Effect of high temperature AIN buffer layer on the properties of AlxGa1-xN e pilayer grown by HVPE 

PSS C (Physica Status Solidi C)

2010. 07

Characterization of etch pit density for Gallium Nitride layer grown by HVPE and MOCAD

Reducing the warpage and dislocation density of GaN template grown by HVPE with gallium droplettreatments


Presenlation

Conference

Date 

Title 

IWN 2014

2014. 08

The effect of nitridation in AIN growth on GaN Template by HVPE

The effects of flow rate and V/III ratio on the growth of a-plane GaN epi-layer on r-plance sapphire by HVPE method

ICMOVPE

2014. 07

Improvement of surface morphology for AIN epi-layer on sapphire by the controlled nitridation and V/III flow ratio in HVPE system

Effect of AIN buffer layer deposition temperature on the characteristics of AIN epi-layers on Si(111)

CGCT 2014

2014. 06

Improvements of Crystal Quality by Nitridation in AIN Grown on GaN Template by HVPE

The effect of the controlled nitridatation and V/III ratio for AIN epitaxial layer grown on sapphire by HVPE

WLED-5

2014. 06

The effect of various V/III ratios and flow rates for a-plane GaN on r-plane sapphire directly grown by Hydride Vapor Phase Epitaxy

ICAE 2013

2013. 11

The growth of semi-polar(11-22)GaN layer grown by HVPE with the control of gas flows on the semi-polar (11-22)GaN Template

Effects of Group V/III ratio and GaN inter-layer on the crystal quality of InN grown by HVPE method

ICNS-10

2013. 08

Investigation for the distribution of stress for freestanding GaN after LLO process grown by HVPE

The Control of mechanical bow for GaN substrate grown by HVPE with relatively longer radiius of lattice curvature

The 2nd international Sympsium on Single Crystal and Wafers

2013. 06

The growth of thick semi-polar(11-22)GaN layer grown by HVPE on the semi-polar (11-22)GaN template

Optimization of freestanding thick GaN wafer bow grown by HVPE
Dislocation density of HVPE grown ALN epi-later on sapphire substrate by X-ray rocking curve measurement

APWS 2013

2013. 05

Improvement of AIN layer Growth o sapphire substrate by Relative low temperature HVPE

The 6th Society of LED and Solid State Lighting

Electronic Material Engineers

2012. 08

The effect of chemical mechanical polishing for the removals of the damage layers in the surface preparation of GaN substrate

2012 The Korea Institute of Electrical and Electronic Material Engineers

2012. 06

Effect of high-temperature AIN buffer layer thickness on the properties of AIGaN epilayer grown by HVPE

The 1st international Symposium on Single Crystal and Wafers for LED

2012. 06

How to Reduce Manufacturing Cost of Free Standing GaN wafer by HVPE

Study for Bowing of Free-Standing GaN Wafer by HVPE
Growth and characteriation of The AlxGa1-xN Epilayers grown with the variation of Al input Flux Ratio by HVPE

ICMOPVE

2012. 05

Epitaxy of GaN on Si(111)substrate with AlcGa-xN buffer later by hydride vapor phase epitaxy method

Growth and characteriation of The AlxGa1-xN Epilayers grown with the variation of AI input Flux Ratio by HVPE

2011 ICAE (International Conference on Advanced Electomaterials) 

2011. 11

Growth of high quality GaN epitaxial layer with AIGaN buffer on silicon substrate by HVPE

Effect of high temperature AIN buffer layer on the properties of AIxGa1-xN epilayer grown by HVPE

2011 The Korean Association of crystal Growth 

2011. 10

Growth of high quality GaN epitaxial layer with AIGaN buffer on silicon substrate by HVPE

Effect of growth conditions on the properties of AIGaN epilayers grown by HVPE

2011 KACG International Symposium on Crystal Growth 

2011. 10

Growth of high quality GaN epitaxial layer with AIGnN buffer on silicon substrate by HVPE

2011 IFFM (International Forum on Functional Materials)

2011. 07

The effects of growth temperate on the propertiws of AIGaN Epilayer grown by HVPE

5th 2011 APWS (Asia-Pacific Workshop on Widegap Semiconductors) 

2011. 05

Crystallinity improvement of GaN template grown by HVPE with the initial growth control

Fabrication of high efficiency InGaN/GaN LED on thick GaN template grown by HVPE

The 2nd Forum of Nitride

semiconductor materials and devices 

2011. 04

GaN wafer development trend

2011 The Korean Association of crystal Growth2011. 04The effects of growth temperate on the properties of AIGaN Epilayer grown by HVPE

The 5th international Conference on LED & Solid State Lighting 

2011. 04

Improvement of crystalline properties for GaN Template by the control of multi-step growths

2011 Korea Conference of Semiconductors2011. 02Effect of initial nucleation layer growth conditions on the properties of the GnN Epilayer grown by HVPE
2010 The Korea Association of crystal Growth 2010. 04Correlation between bowing and Raman shift of hetero epitaxial GaN grown by hydride vapor phase epitaxy
The 4th international Conference on LED & Solid State Lighting2010. 02The effect of GaN layer thickness on the measured FWHM of X-ray rocking curve
2009 ICNS (International Conference on Nitride Semiconductors)2009. 10Characterization of etch pit density for Gallium Nitride layer grown by HVPE and MOCVD
Reducing the warpage and dislocation density of GaN template grown by HVPE with gallium droplet treatements
2009 Society of LED and Solid State Lighting2009. 10Analysis of GaN Template defect by high resolution x-ray diffraction
2008 The Korea Association of crystal Growth 2008. 04Effects of patterned sapphire substrates on the bowing of MOCVD Grown GaN template